Physical Probing of Quantum Energy Levels in a Single Indium Arsenide (InAs) Quantum Dot
نویسندگان
چکیده
Indium arsenide (InAs) quantum dots (QDs) grown by molecular beam epitaxy (EBM) on gallium (GaAs) substrates have exhibited quantized charge-trapping characteristics.
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ژورنال
عنوان ژورنال: Nanoscale advances
سال: 2023
ISSN: ['2516-0230']
DOI: https://doi.org/10.1039/d3na00638g